t4 - lds -0 138 , rev . 2 (1 21993 ) ?201 3 microsemi corporation page 1 of 6 1n1184, 1n1186, 1n1188, 1n1190, 1n3766 and 1n3768 (r) available on commercial versions high reliability silicon power rectifier qualified per mil -prf- 19500/297 qualified levels : jan, jantx, and jantxv description this series of s ilicon power rectifier part numbers are qualified up to the jantxv level f or high reliability applications. they are constructed with glass passivated di e and feature glass to metal seal construction. they have a 500 amp surge rating and provide a v rwm u p to 1000 volts. do -5 (do- 203ab) package important: for the latest information, visit our website http://www.microsemi.com . features ? high c ontinuous c urrent r ating . ? very l ow f orward v oltage . ? low t hermal r esistance. ? jan, jantx and jantxv qualifications are available per mil - prf - 19500/297 . ? rohs compliant devices available (commercial grade only). applications / benefits ? high frequency switching circuits. ? mechanically r ugged do - 5 p ackage . m axim um rati ngs @ t a = +25 oc unless otherwise stated msc C law rence 6 lake street, lawrence, ma 01841 1- 800 - 446 - 1158 (978) 620 - 2600 fax: (978) 689 - 0803 m sc C ireland gort road business park, ennis, co. clare, ireland tel: +353 (0) 65 6840044 fax: +353 (0) 65 6822298 website: www.microsemi.com paramet ers/test conditions symbol value unit junction and storage temperature t j and t stg -6 5 to +175 o c thermal resistance junction - to - case r ? jc 0.8 o c /w working peak reverse voltage 1n1184(r) 1n1186(r) 1n1188(r) 1n1190(r) 1n3766(r) 1n3768(r) v rw m 100 2 00 400 600 800 1000 v maximum average dc output current @ t c = 1 50 o c (1) i o 35 a non - repetitive sinusoidal surge current @ 1/120 s, t c = 150 oc i fsm 5 00 a note: 1. derate linearly 1.4 a oc between t c = 150 oc to t c = 175 oc . downloaded from: http:///
t4 - lds -0 138 , rev . 2 (1 21993 ) ?201 3 microsemi corporation page 2 of 6 1n1184, 1n1186, 1n1188, 1n1190, 1n3766 and 1n3768 (r) mechanical and packa ging ? case: hermetically s ealed m etal and g lass c ase b ody. ? terminal s: hot s older d ip (sn63/pb37) on standard c ommercial, j an, jant x , and jantx v levels. rohs compliant matte -t in on n ickel is available on commercial grade only . ? marking: p olarity symbol a nd p art number. ? polarity: standard polarity devices are cathode to stud . reverse polarity devices are anode to stud . ? w eight: approximately 14 grams. ? see package dimensions on last page. part nomenclature jan 1n1 184 r e3 reliability level jan = jan level jantx = jantx level jantxv = jantxv level blank = commercial jedec type number (s ee e lectrical characteristic s t able ) rohs compliance e3 = rohs c ompliant ( a va ilable on commercial grade only ) blank = non - rohs c ompliant polarity r = anode to stud blank = cathode to stud symbols & definitions symbol definition i f forward current: the forward current dc value, no alternating component . i fsm maximum forward surge current: the forward current, surge peak or rated forward surge current. i o average rectified output current: the o utput c urrent averaged over a full cycle with a 50 hz or 60 hz sine - wave input and a 180 degree conduction angle. i r reverse current: the maximum reverse (leakage) current that will flow at the specified volt age and temperature. v f maximum forward voltage: the maximum forward voltage the device will exhibit at a specified curr ent. v rw m working peak reverse voltage: the maximum peak voltage that can be applied over the operating temperature range excluding all transient voltages (ref jesd282 - b). also sometimes known as piv. downloaded from: http:///
t4 - lds -0 138 , rev . 2 (1 21993 ) ?201 3 microsemi corporation page 3 of 6 1n1184, 1n1186, 1n1188, 1n1190, 1n3766 and 1n3768 (r) electrical characteristics parameters / test conditions symbol min. max. unit forward voltage i f = 110 a, t c = 25 c (1) v f 1.4 v forward voltage i f = 500 a, t c = 150 c (2) v f 2.3 v reverse current v rwm = 100 v , t j = 25 c v rwm = 200 v , t j = 25 c v rwm = 400 v , t j = 25 c v rwm = 600 v , t j = 25 c v rwm = 800 v , t j = 25 c v rwm = 1000 v , t j = 25 c 1n1184(r) 1n1186(r) 1n1188(r) 1n1190(r) 1n3766(r) 1n3768(r) i r 10 a reverse current v rwm = 100 v , t j = 150 c v rwm = 200 v , t j = 150 c v rwm = 400 v , t j = 150 c v rwm = 600 v , t j = 150 c v rwm = 800 v , t jj = 150 c v rwm = 1000 v , t j = 150 c 1n1184(r) 1n1186(r) 1n1188(r) 1n1190(r) 1n3766(r) 1n3768(r) i r 1 ma notes: 1. tp < 8.3 ms, duty cycle 2 percent pulse . 2. vf1 shall be performed with either tp = 800 s or tp = 8.3 ms . downloaded from: http:///
t4 - lds -0 138 , rev . 2 (1 21993 ) ?201 3 microsemi corporation page 4 of 6 1n1184, 1n1186, 1n1188, 1n1190, 1n3766 and 1n3768 (r) graphs instantaneous forward voltage - volts figure 1 typical forward characteristics reverse voltage - volts figure 2 typical reverse characteristics instantaneous forward current - amperes typical reverse current - ma downloaded from: http:///
t4 - lds -0 138 , rev . 2 (1 21993 ) ?201 3 microsemi corporation page 5 of 6 1n1184, 1n1186, 1n1188, 1n1190, 1n3766 and 1n3768 (r) graphs (continued) maximum allowable case temper ature - c figure 3 forward current derating time in seconds figure 4 transient the rmal impedance average forward current C amperes junction to case thernal impedance - c/ watts downloaded from: http:///
t4 - lds -0 138 , rev . 2 (1 21993 ) ?201 3 microsemi corporation page 6 of 6 1n1184, 1n1186, 1n1188, 1n1190, 1n3766 and 1n3768 (r) package dimensions notes: 1. dimensions are in inches. 2. millimeters are given for general information only. 3. units must not be damaged by torque of 30 inch - pounds applied to 0 .250 - 28 unf - 28 nut assembled on thread. 4. diameter of unthreaded portion 0 .249 inch (6.32 mm) max and .220 inch (5.59 mm) min. 5. complete threads to extend to within 2.5 threads of seating plane. 6. angular orientation of this terminal is undefined. 7. max pitch diameter of plated threads shall be basic pitch diameter 0 .2268 inch (5.76 mm) reference fed - std - h28. 8. a chamfer or undercut on one or both ends of the hex portion is optional; minimum base diameter at seating plane. 0 .600 inch (15.24 mm). 9. in accordance with asme y14.5m, diameters are equivalent to x symbology. ltr dimensions inch millimeters min max min max oah - 1.000 - 25.40 ch - 0 .450 - 11.43 ht 0 .115 0 .200 2.93 5.08 sl 0 .422 0 .453 10.72 11.50 ht1 0 .060 - 1.53 - b 0 .250 0 .375 6.35 9.52 cd - 0 .667 - 16.94 hf 0 .667 0 .687 16.95 17.44 j 0 .156 - 3.97 - t 0 .140 0 .175 3.56 4.44 c - 0 .080 - 2.03 m 0 .030 - 0.77 - downloaded from: http:///
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